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authFullName_s : Hervé Boutry

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Rami Khazaka , Yann Bogumilowicz , Denis Rouchon , Hervé Boutry , Zdenek Chalupa , et al.
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Journal articles hal-01947859v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem , et al.
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Conference papers hal-01954906v1

Analysis of nickel cylindrical bump insertion into aluminium thin film for flip chip applications

Mamadou Diobet Diop , Vincent Mandrillon , Hervé Boutry , Karim Inal , Roland Fortunier
Microelectronic Engineering, 2009, 87 (3), pp.522-526. ⟨10.1016/j.mee.2009.07.020⟩
Journal articles istex emse-00450478v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière , et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Conference papers hal-01891383v1

MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate

Mickael Martin , Romain Cipro , M. Billaud , Jérémy Moeyaert , Franck Bassani , et al.
MRS Spring Meeting, Apr 2015, San Francisco, California, United States. 2015
Conference poster hal-01489617v1
Image document

Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP

Philippe Ferrandis , Mathilde Billaud , Julien Duvernay , Mickaël Martin , Alexandre Arnoult , et al.
Journal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal articles hal-01987681v1

Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates

Rami Khazaka , Yann Bogumilowicz , Anne-Marie Papon , Hugo Dansas , Hervé Boutry , et al.
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Journal articles cea-02185226v1