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authFullName_s : G. Reimbold

Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas , et al.
International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan
Conference papers hal-00604215v1
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S. Ecoffey , S. Mahapatra , V. Pott , D. Bouvet , G. Reimbold , et al.
ENS 2005, Dec 2005, Paris, France. pp.51-54
Conference papers hal-00166985v1

Détermination expérimentale de la variation de la masse de conductivité des électrons dans un transistor MOS sous contrainte uniaxiale selon [110]

F. Rochette , M. Cassé , M. Mouis , G. Reimbold , F. Boulanger
Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, GRENOBLE, France. pp.XX
Conference papers hal-00148274v1

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

M. Koyama , M. Casse , R. Coquand , S. Barraud , C. Vizioz , et al.
Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩
Journal articles hal-01002176v1

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

J. Lehmann , C. Leroux , M. Charles , A. Torres , E. Morvan , et al.
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩
Conference papers hal-02009897v1

Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale

J. Pelloux-Prayer , M. Cassé , S. Barraud , F. Triozon , Z. Zeng , et al.
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, France. pp.1-2
Conference papers hal-02143469v1

A new gate pattern measurement for evaluating the BTI degradation in circuit conditions

A. Subirats , X. Garros , J. Cluzel , J. El Husseini , F. Cacho , et al.
2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.5D.1.1-5D.1.5, ⟨10.1109/IRPS.2014.6860670⟩
Conference papers hal-02049034v1

Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

C. Suarez-Segovia , C. Leroux , P. Caubet , F. Domengie , G. Reimbold , et al.
Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩
Journal articles hal-01947661v1

Comparison of RTN and TDDS methods for trap extraction in trigate nanowires

A. Tsiara , X. Garros , A. Vernhet , S. Barraud , O. Faynot , et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.3E-4.1-3E-4.6, ⟨10.1109/IRPS.2017.7936297⟩
Conference papers hal-02050205v1

A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization

T. Lorin , W. van den Daele , C. Gillot , M. Charles , J. Biscarrat , et al.
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.150-153, ⟨10.1109/ICMTS.2017.7954286⟩
Conference papers hal-02050207v1

Strain-Enhanced Performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyamad , D. Cooper , C. Vizioz , et al.
ECS Transactions, 2013, 53, pp.125-136
Journal articles hal-00994254v1

Reliability of ultra-thin buried oxides for multi-VT FDSOI technology

G. Besnard , X. Garros , P. Nguyen , F. Andrieu , P. Reynaud , et al.
Solid-State Electronics, 2014, 97, pp.8-13. ⟨10.1016/j.sse.2014.04.035⟩
Journal articles hal-02002976v1

Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias

G. Besnard , X. Garros , A. Subirats , F. Andrieu , X. Federspiel , et al.
2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2015, Hsinchu, Taiwan. pp.73-74, ⟨10.1109/VLSI-TSA.2015.7117577⟩
Conference papers hal-02008449v1

DLTS study of extended defects in HgCdTe photodiodes

P. Guinedor , T. Broult , A. Brunner , L. Rubaldo , D. Bauza , et al.
19th International Conference on Extended Defects in Semiconductors (EDS),, Jun 2018, Thessaloniki, Greece
Conference papers hal-02016057v1

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan , et al.
INFOS 2013, Jun 2013, Cracow, Poland. pp.P.14
Conference papers hal-01074271v1

Study of the piezoresistive properties of NMOS and PMOS Ω-gate SOI nanowire transistors: Scalability effects and high stress level

J. Pelloux-Prayer , M. Cassé , S. Barraud , P. Nguyen , M. Koyama , et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, France. pp.20.5.1-20.5.4
Conference papers hal-02138872v1

Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

B. Mohamad , G. Ghibaudo , C. Leroux , E. Josse , G. Reimbold
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.4, ⟨10.1109/S3S.2015.7333546⟩
Conference papers hal-02049810v1

Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model

Johan Pelloux-Prayer , Mikael Casse , Francois Triozon , Sylvain Barraud , Yann-Michel Niquet , et al.
Solid-State Electronics, 2016, 125, pp.175-181. ⟨10.1016/j.sse.2016.09.002⟩
Journal articles cea-01851576v1
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On the electrical variability of resistive-switching memory devices based on NiO oxide

S Tirano , Marc Bocquet , Christophe Muller , D. Deleruyelle , L. Perniola , et al.
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States
Conference papers hal-01745633v1

Self-heating assessment and cold current extraction in FDSOI MOSFETs

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger , et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩
Conference papers hal-02050233v1

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology

G. Besnard , X. Garros , A. Subirats , F. Andrieu , X. Federspiel , et al.
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.2F.1.1-2F.1.5, ⟨10.1109/IRPS.2015.7112691⟩
Conference papers hal-02004106v1

Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation

A. Subirats , X. Garros , J. El Husseini , C. Le Royer , G. Reimbold , et al.
IEEE Transactions on Electron Devices, 2013, 60, pp.2604-2610
Journal articles hal-01018674v1

An attempt to explain thermally induced soft failures during low level ESD stresses: study of the differences between soft and hard NMOS failures

P. Salome , Cédric Leroux , D. Mariolle , D. Lafond , Jean-Pierre Chante , et al.
Microelectronics Reliability, 1998, 38 (11), pp.1763-1772
Journal articles hal-00141557v1

Defects study in IR SWIR HgCdTe photodetectors using DLTS

A. Brunner , L. Rubaldo , J. Berthoz , D. Bauza , G. Reimbold
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.9-11, ⟨10.1109/WOLTE.2014.6881013⟩
Conference papers hal-02017248v1

Impact of dynamic variability on SRAM functionality and performance in nanoscaled CMOS technologies.

A. Subirats , X. Garros , J. Mazurier , J. El Husseini , O. Rozeau , et al.
IRPS 2013, Apr 2013, Monterey, CA, United States. pp.389-393, ⟨10.1109/IRPS.2013.6532008⟩
Conference papers hal-01074529v1

Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating

A. Laurent , X. Garros , S. Barraud , G. Mariniello , G. Reimbold , et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩
Conference papers hal-02050194v1

Thermal effects in 3D sequential technology

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger , et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩
Conference papers hal-02050229v1

N-doped GeTe as performance booster for embedded phase-change memories

A. Fantini , V. Sousa , L. Perniola , E. Gourvest , J.C. Bastien , et al.
Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States
Conference papers hal-00625213v1

Investigation of new chalcogenide materials to improve the PCM performance

V. Sousa , L. Perniola , G. Navarro , N. Pashkov , M. Suri , et al.
2011 SIMIT, 11th Non-volatile memory technology symposium, Nov 2011, Shangai, China
Conference papers hal-00669545v1
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

I. Nifa , C. Leroux , A. Torrès , M. Charles , G. Reimbold , et al.
Microelectronic Engineering, 2019, 215, pp.110976. ⟨10.1016/j.mee.2019.05.003⟩
Journal articles hal-02145457v1