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Topological localisation of defects at atomic scaleImage Analysis & Stereology, 2002, 21, pp.191-198
Journal articles
hal-02473817v1
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Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaNphysica status solidi (b), 2006, 243, pp.1541-1544
Journal articles
cea-00344156v1
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Swift heavy ion effects in gallium nitrideInt. J. Nanoelectronics and Materials, 2008, 1, pp.101-106
Journal articles
cea-00371869v1
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Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulationThin Solid Films, 2008, 516, pp.3772-3775
Journal articles
cea-00306400v1
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