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authFullName_s : Gérard Nouet
Image document

Topological localisation of defects at atomic scale

Jean-Paul Jernot , Patricia Jouannot-Chesney , Christian Lantuéjoul , Gérard Nouet , Pierre Ruterana
Image Analysis & Stereology, 2002, 21, pp.191-198
Journal articles hal-02473817v1

Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

T. Wojtowicz , Florence Gloux , Pierre Ruterana , Gérard Nouet , Loic Bodiou , et al.
physica status solidi (b), 2006, 243, pp.1541-1544
Journal articles cea-00344156v1

Swift heavy ion effects in gallium nitride

S. Mansouri , Philippe Marie , Christian Dufour , Gérard Nouet , Isabelle Monnet , et al.
Int. J. Nanoelectronics and Materials, 2008, 1, pp.101-106
Journal articles cea-00371869v1

Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

Benliang Lei , Guanghui Yu , Haohua Ye , Sheng Meng , Xinzhong Wang , et al.
Thin Solid Films, 2008, 516, pp.3772-3775
Journal articles cea-00306400v1