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authFullName_s : Frédéric Gaillard

Study of forward AC stress degradation of GaN-on-Si Schottky diodes

T. Lorin , W. Vandendaele , R. Gwoziecki , C. Gillot , J. Biscarrat , et al.
Microelectronics Reliability, 2018, 88-90, pp.641-644. ⟨10.1016/j.microrel.2018.07.103⟩
Journal articles hal-01948047v1

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration

Tadeu Mota Frutuoso , Xavier Garros , Perrine Batude , Laurent Brunet , Joris Lacord , et al.
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Jun 2022, Honolulu (HI), United States. ⟨10.1109/VLSITechnologyandCir46769.2022.9830504⟩
Conference papers hal-04069091v1
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Immersed and integrated converter (30 kW) for fuel cell system in aircraft application

Sylvain Mercier , Bruno Beranger , Jacques Ecrabey , Frédéric Gaillard
Bodo's Power Systems, 2023, 02, pp.28-29
Journal articles cea-04022909v1

Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration

Tadeu Mota Frutuoso , José Lugo-Alvarez , Xavier Garros , Laurent Brunet , Mickaël Cassé , et al.
Symposium on VLSI Technology 2021, Jun 2021, Kyoto, Japan
Conference papers hal-04069684v1

On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT

Abygael Viey , William Vandendaele , Marie-Anne Jaud , Romain Gwoziecki , Alphonse Torres , et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN
Conference papers hal-02052343v1