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Study of forward AC stress degradation of GaN-on-Si Schottky diodes
T. Lorin
,
W. Vandendaele
,
R. Gwoziecki
,
C. Gillot
,
J. Biscarrat
,
et al.
Journal articles
hal-01948047v1
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Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration
Tadeu Mota Frutuoso
,
Xavier Garros
,
Perrine Batude
,
Laurent Brunet
,
Joris Lacord
,
et al.
Conference papers
hal-04069091v1
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Immersed and integrated converter (30 kW) for fuel cell system in aircraft application
Sylvain Mercier
,
Bruno Beranger
,
Jacques Ecrabey
,
Frédéric Gaillard
Bodo's Power Systems, 2023, 02, pp.28-29
Journal articles
cea-04022909v1
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Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration
Tadeu Mota Frutuoso
,
José Lugo-Alvarez
,
Xavier Garros
,
Laurent Brunet
,
Mickaël Cassé
,
et al.
Symposium on VLSI Technology 2021, Jun 2021, Kyoto, Japan
Conference papers
hal-04069684v1
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On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT
Abygael Viey
,
William Vandendaele
,
Marie-Anne Jaud
,
Romain Gwoziecki
,
Alphonse Torres
,
et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN
Conference papers
hal-02052343v1
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