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From epitaxy to converters topologies what issues for 200 mm GaN/Si?2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, DC, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2015.7409712⟩
Conference papers
cea-01839849v1
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