Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise
M. Valenza
,
J. Gyani
,
F. Martinez
,
S. Soliverès
,
C. Le Royer
,
et al.
Journal articles
istex
hal-01653011v1
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Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation
A. Subirats
,
X. Garros
,
J. El Husseini
,
C. Le Royer
,
G. Reimbold
,
et al.
IEEE Transactions on Electron Devices , 2013, 60, pp.2604-2610
Journal articles
hal-01018674v1
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Selected SOI puzzles and tentative answers
K.-I. Na
,
W. van den Daele
,
L. Pham-Nguyen
,
M. Bawedin
,
K.-H. Park
,
et al.
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics , Oct 2010, Kiev, Ukraine
Conference papers
hal-00604923v1
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New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETs
J. El Husseini
,
Frédéric Martinez
,
J. Armand
,
M. Bawedin
,
M. Valenza
,
et al.
Journal articles
istex
hal-02093037v1
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First SOI Tunnel FETs with low-temperature process
C. Diaz Llorente
,
C. Le Royer
,
C-M. Lu
,
P. Batude
,
C. Fenouillet-Beranger
,
et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , Apr 2017, Athens, Greece. pp.9-12,
⟨10.1109/ULIS.2017.7962579⟩
Conference papers
hal-02007188v1
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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs
S. Morvan
,
F. Andrieu
,
Cédric Leroux
,
X. Garros
,
M. Casse
,
et al.
Journal articles
hal-00996453v1
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Experimental Investigation of the Tunneling Injection Boosters for Enhanced ION ETSOI Tunnel FET
A. Villalon
,
C. Le Royer
,
M. Casse
,
D. Cooper
,
J.-M. Hartmann
,
et al.
Journal articles
hal-00994546v1
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On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices
A. Bonnevialle
,
S. Reboh
,
C. Le Royer
,
Y. Morand
,
J.-M. Hartmann
,
et al.
Journal articles
istex
hal-01719490v1
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Review of some critical aspects of Ge and GeOI substrates
L. Clavelier
,
C. Deguet
,
C. Le Royer
,
B. Vincent
,
J.-F. Damlencourt
,
et al.
Workshop on Germanium for CMOS , Nov 2006, ville indéterminée, Unknown Region. pp.789-805,
⟨10.1149/1.2355874⟩
Conference papers
hal-01736072v1
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New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures
C. Diaz Llorente
,
J.-P. Colinge
,
S. Martinie
,
S. Cristoloveanu
,
J. Wan
,
et al.
Journal articles
hal-02321885v1
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(Invited) Special Memory Mechanisms in SOI Devices
S. Cristoloveanu
,
M. Bawedin
,
C. Navarro
,
S. Chang
,
J. Wan
,
et al.
227th ECS Meeting: 17th Int. Symposium on Advanced CMOS-Compatible Semiconductor Devices , Y. Omura, J.A. Martino, J.P. Raskin, S. Selberherr, H. Ishi, F. Gamiz and B. Nguye, May 2015, Chigaco, United States
Conference papers
hal-02007799v1
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Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond
A. Idrissi-El Oudrhiri
,
S. Martinie
,
J-C. Barbe
,
O. Rozeau
,
C. Le Royer
,
et al.
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) , Sep 2015, Washington DC, United States. pp.206-209,
⟨10.1109/SISPAD.2015.7292295⟩
Conference papers
hal-02016552v1
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A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
M. Valenza
,
J. El Husseini
,
J. Gyani
,
Frédéric Martinez
,
M. Bawedin
,
et al.
Journal articles
istex
hal-02064898v1
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Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature
Cuiqin Xu
,
P. Batude
,
C. Rauer
,
C. Le Royer
,
L. Hutin
,
et al.
Solid-State Devices Meeting , Sep 2010, tokyo, Japan
Conference papers
hal-00604646v1
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Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level
W. van den Daele
,
E. Augendre
,
S. Cristoloveanu
,
C. Le Royer
,
L. Clavelier
,
et al.
Proc. in Silicon-on-Insulator Technology and Devices 14, (Y. Omura, S. Cristoloveanu, F. Gamiz, B-Y. Nguyen eds.), Pennington (USA), ECS Transactions, in press (2009 , May 2009, San Francisco, United States
Conference papers
hal-00603712v1
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Self-aligned contacts for 10nm FDSOI node : from device to circuit evaluation
H. Niebojewski
,
C. Le Royer
,
Y. Morand
,
O. Rozeau
,
M.A. Jaud
,
et al.
39th IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE S3S 2013 , 2013, Monterey, CA, United States. paper 6a.4, 2 p.,
⟨10.1109/S3S.2013.6716549⟩
Conference papers
hal-00955675v1
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Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs
R. Lavieville
,
C. Le Royer
,
S. Barraud
,
G. Ghibaudo
12th International Workshop on Low Temperature Electronics (WOLTE-12) , Sep 2016, Tempe, United States
Conference papers
hal-02072793v1
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Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices
S. Cristoloveanu
,
J. Wan
,
P. Ferrari
,
M. Bawedin
,
C. Navarro
,
et al.
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) , Oct 2014, Millbrae, United States. pp.5.12,
⟨10.1109/S3S.2014.7028228⟩
Conference papers
hal-02003987v1
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Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance
C. Le Royer
,
A. Villalon
,
S. Martinie
,
P. Nguyen
,
S. Barraud
,
et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , Jan 2015, Bologna, Italy. pp.69-72,
⟨10.1109/ULIS.2015.7063775⟩
Conference papers
hal-02004064v1
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1∕f noise in 0.12 μm P-MOSFETs with High-k and metal gate fabricated in a Si Process Line on 200 mm GeOI Wafers
J. Gyani
,
Frédéric Martinez
,
S. Soliverès
,
M. Valenza
,
C. Le Royer
,
et al.
NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009) , 2009, Pisa (Italy), Italy. pp.259-262,
⟨10.1063/1.3140445⟩
Conference papers
hal-02063016v1
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Improved extraction of GIDL in FDSOI devices for proper junction quality analysis
C. Xu
,
P. Batude
,
K. Romanjek
,
C. Le Royer
,
C. Tabone
,
et al.
Conference papers
hal-01959402v1
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Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes
Heimanu Niebojewski
,
C. Le Royer
,
Y. Morand
,
O. Rozeau
,
M.A. Jaud
,
et al.
Journal articles
hal-01000014v1
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Sharp-Switching CMOS-Compatible Devices with High Current Drive
J. Wan
,
S. Cristoloveanu
,
S. T. Le
,
A. Zaslavsky
,
C. Le Royer
,
et al.
Serge Luryi,Jimmy Xu and Alex Zaslavsky.
Future Trends in Microelectronics: Frontiers and Innovations , John Wiley & Sons, Inc., Hoboken, NJ, USA, pp.81-92, 2013, 978-111-8442-16-6 (print)/978-1118678107(online).
⟨10.1002/9781118678107.ch5⟩
Book sections
hal-01060432v1
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(Invited) Special Memory Mechanisms in SOI Devices
S. Cristoloveanu
,
M. Bawedin
,
C. Navarro
,
S. Chang
,
J. Wan
,
et al.
Journal articles
hal-02007772v1
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A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
S. Cristoloveanu
,
K.H. Lee
,
S. Parihar
,
H. El Dirani
,
J. Lacord
,
et al.
Journal articles
hal-02003277v1
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Impact of strain on access resistance in planar and nanowire CMOS devices
Rémy Berthelon
,
F. Andneu
,
F. Triozon
,
M. Cassé
,
L. Bourdet
,
et al.
Conference papers
hal-02050220v1
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Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function
R. Kom Kammeugne
,
C. Leroux
,
J. Cluzel
,
L. Vauche
,
C. Le Royer
,
et al.
Journal articles
cea-03250807v1
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Advanced pMOSFET on germanium-on-insulator : low temperature properties.
W. van den Daele
,
S. Cristoloveanu
,
E. Augendre
,
C. Le Royer
,
L. Clavelier
,
et al.
5th EUROSOI Workshop , Jan 2009, France. pp.1408-1411
Conference papers
hal-00603743v1
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Smart solutions for efficient dual strain integration for future FDSOI generations
A. Bonnevialle
,
C. Le Royer
,
Y. Morand
,
S. Reboh
,
C. Plantier
,
et al.
Conference papers
hal-01719489v1
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues
A. Villalon
,
C. Le Royer
,
S. Cristoloveanu
,
M. Casse
,
D. Cooper
,
et al.
Journal articles
hal-00994552v1
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