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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challengesApplied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Journal articles
hal-01947859v1
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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAMMaterials Science in Semiconductor Processing, 2017, 71, pp.433 - 440. ⟨10.1016/j.mssp.2017.08.033⟩
Journal articles
cea-01586412v1
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Ω-Gate Nanowire Transistors Realized by Sidewall Image Transfer Patterning: 35nm Channel Pitch and Opportunities for Stacked-Nanowires Architectures2015 international Conference on Solid State Devices and Materials, Sep 2015, Sapporo, Japan. N-2-2 Process for fully depleted devices
Conference papers
hal-02015323v1
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Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substratesApplied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Journal articles
cea-02185226v1
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