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authFullName_s : Bernard Previtali

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Rami Khazaka , Yann Bogumilowicz , Denis Rouchon , Hervé Boutry , Zdenek Chalupa , et al.
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Journal articles hal-01947859v1
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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM

Philippe Rodriguez , Romain Famulok , Yannick Le Friec , Jean-Philippe Reynard , Benoit-Noël Bozon , et al.
Materials Science in Semiconductor Processing, 2017, 71, pp.433 - 440. ⟨10.1016/j.mssp.2017.08.033⟩
Journal articles cea-01586412v1

Ω-Gate Nanowire Transistors Realized by Sidewall Image Transfer Patterning: 35nm Channel Pitch and Opportunities for Stacked-Nanowires Architectures

L. Gaben , S. Barraud , P Pimenta-Barros , Yves Morand , J. Pradelles , et al.
2015 international Conference on Solid State Devices and Materials, Sep 2015, Sapporo, Japan. N-2-2 Process for fully depleted devices
Conference papers hal-02015323v1

Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates

Rami Khazaka , Yann Bogumilowicz , Anne-Marie Papon , Hugo Dansas , Hervé Boutry , et al.
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Journal articles cea-02185226v1