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authFullName_s : A. Souifi

Work function tuning dopant scanning and related effects in Ni fully silicided gate fro sub-45nm nodes CMOS

D. Aime , B. Froment , Florian Cacho , V. Carron , S. Descombes , et al.
Electron Devices Meeting, 2004. IEDM Technical Digest, 2004, pp.87-90, ⟨10.1109/IEDM.2004.1419073⟩
Conference papers hal-00157607v1

Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

M. Kanoun , A. Souifi , T. Baron , Frédéric Mazenc
Applied Physics Letters, 2004, pp.84(25): 5079-81, (2004)
Journal articles hal-00477273v1

Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

P.-V. Guenery , E. Leon Perez , K. Ayadi , J. Moeyaert , S. Labau , et al.
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩
Conference papers hal-02330674v1

Hot spot aware microchannel cooling add-on for microelectronic chips in mobile devices

L. Collin , P. Colonna , P. Coudrain , S. Shirazy , S. Cheramy , et al.
2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), May 2017, Orlando, United States. ⟨10.1109/ITHERM.2017.7992523⟩
Conference papers hal-01921614v1

Study of trap centres in silicon nanocrystal memories

A. Souifi , P. Brounkov , S. Bernardini , C. Busseret , L. Militaru , et al.
Materials Science and Engineering, 2003, pp.B, Volume 102, Issues 1-3, 15 Pages 99-107
Journal articles hal-00477192v1

On the saturation mechanism in the Ge nanocrystals-based non-volatile memory

M. Kanoun , C. Busseret , T. Baron , A. Souifi
Solid-State Electronics, 2006, pp.50(5), May (2006) 769-733
Journal articles hal-00394736v1

Electric measurements by AFM on silicon nano-crystals

S. Decossas , F. Mazen , T. Baron , A. Souifi , G. Bremond
ICSNN, 2002, Toulouse, France
Conference papers hal-00486145v1

InAs Nanocrystals grown by Molecular Beam Epitaxy on SiO2/Si for Non Volatile Memories

M. Hocevar , P. Regreny , A. Descamps , G. Patriarche , T. Baron , et al.
Euro-MBE 14th, 2007, Spain
Conference papers hal-00396817v1
Image document

Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology

P.V. Guenery , E.A. León Pérez , K. Ayadi , N. Baboux , D. Deleruyelle , et al.
Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩
Journal articles hal-03116248v1

Electronic properties of Ge nanocrystals for non volatile memory applications

M. Kanoun , A. Souifi , C. Busseret , A. Poncet , T. Baron , et al.
Solid-State Electronics, 2006, pp.50(7-8) July-Aug. (2006) 1310-14
Journal articles hal-00394741v1

Fabrication and electrical characterization of nanopillars containing silicon nanocrystals

L. Eugene , N. Pauc , T. Baron , A. Souifi , V. Aimez , et al.
CSTC, 2007, montreal, Canada
Conference papers hal-00396812v1
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Multilayer OTS selectors engineering for high temperature stability, scalability and high endurance

C. Laguna , M. Bernard , N. Bernier , D. Rouchon , N. Rochat , et al.
IMW2021 - 2021 IEEE International Memory Workshop, May 2021, Dresden, Germany. pp.1-4, ⟨10.1109/IMW51353.2021.9439590⟩
Conference papers cea-03331470v1

Thin micro-cold plate for hot-spot aware chip cooling

L.-M. Collin , Mahmood Shirazy , J.-P. Colonna , P. Coudrain , S. Cheramy , et al.
2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-8, ⟨10.1109/ESTC.2016.7764500⟩
Conference papers hal-02073375v1

Charging effects in Ge nanocrystals embedded in SiO/sub 2/ matrix for non volatile memory applications

M. Kanoun , T. Baron , E. Gautier , A. Souifi
Materials Science and Engineering: C, 2006, pp.26(2-3) March 2006, 360-3
Journal articles hal-00394738v1

MOCVD grown InAs/GaAs quantum dots on Si substrate

O. Abouzaid , J. Moeyaert , B. Salem , S. David , F. Bassani , et al.
NANO-structures and nanomaterials SElf-Assembly, NanoSEA 2018, 2018, Carqueiranne, France
Conference papers hal-01954896v1

Fabrication and characterization of isolated single Silicon and Germanium nanocrystals using AFM nanomanipulation and sub-10nm gap electrodes

V. Delample , P. Poissant , T. Baron , G. Bremond , A. Souifi , et al.
E-MRS, 2007, strasbourg, France
Conference papers hal-00395918v1

Nanocrystal Memories

T. Baron , B. de Salvo , P. Mur , A. Souifi , M. Gendry , et al.
MRS SPRING MEETING, 2009, San Franscisco, United States
Conference papers hal-00394825v1
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Multilayer structure in SeAsGeSi-based OTS for high thermal stability and reliability enhancement

C. Laguna , M. Bernard , J. Garrione , N. Castellani , V. Meli , et al.
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.225-228, ⟨10.1109/ESSDERC55479.2022.9947186⟩
Conference papers cea-03927024v1

Fabrication and electrical characterization of nanopillars incorporating silicon nanocrystals for optoelectronic applications

L. Eugene , N. Pauc , T. Baron , A. Souifi , V. Aimez , et al.
MRS Fall Meeting, 2007, boston, United States
Conference papers hal-00396814v1

Elaboration de Nanocristaux Silicium, propriétés électriques et optiques

T. Baron , F. Mazen , A. Souifi , P. Gentile , F. Fournel , et al.
VIIIème Journées de la Matière Condensée, 2002, Marseille, France
Conference papers hal-00486149v1
Image document

Electric measurements by AFM on silicon nano-crystals

S. Decossas , F. Mazen , T. Baron , A. Souifi , G. Brémond
Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.543-545. ⟨10.1016/S1386-9477(02)00864-0⟩
Journal articles hal-00477199v1
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Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability

C. Laguna , N. Castellani , M. Bernard , N. Rochat , D. Rouchon , et al.
IMW 2020 - 2020 IEEE International Memory Workshop, May 2020, Dresde, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108130⟩
Conference papers cea-02930899v1