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authFullName_s : A. Roule

Study of chemical elements diffusion before and after resistive switching in Ta2O5-based CBRAM.

A. Marty , R. Gassilloud , E. Martinez , Corentin Vallée , M. Veillerot , et al.
EMRS Spring, 2015., 2015, Lille, France
Conference papers hal-01877907v1

Influence of Nitrogen Doping on Phase-Change Behaviour of GeTe for Embedded PCRAM Applications

E. Gourvest , A. Fantini , J.C. Bastien , A. Bastard , S. Loubriat , et al.
MAM 2010, 2010, Mechelen, Belgium
Conference papers hal-00625275v1

Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs

V. Jousseaume , A. Fantini , J.F. Nodin , C. Guedj , A. Persico , et al.
Solid-State Electronics, 2011, 58, pp.62-67
Journal articles hal-00669415v1

Impact of dielectrics thermodynamics properties on the diffusion of copper and oxygen in CuTe-based CBRAM devices.

A. Marty , R. Gassilloud , E. Martinez , Corentin Vallée , M. Veillerot , et al.
MRS, 2015, Boston, United States
Conference papers hal-01877926v1

Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments

W. Pessoa , A. Roule , E. Nolot , Y. Mazel , M. M. Bernard , et al.
Spectrochimica Acta Part B: Atomic Spectroscopy, 2018, 149, pp.143 - 149. ⟨10.1016/j.sab.2018.07.003⟩
Journal articles cea-01917750v1

Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.

G. Piccolboni , A. El Kacimi , G. Molas , A. Marty , R. Gassilloud , et al.
EMRS, 2015, 2015, Lille, France
Conference papers hal-01877911v1

Phase Change Memories Challenges: A Material and Process Perspective

S. Maitrejean , G. Ghezzi , E. Gourvest , A. Roule , F. Fillot , et al.
IEEE International Interconnect Technology Conference - IITC, 2012, San Jose, United States
Conference papers hal-00777990v1

Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips

L. Masarotto , L. Frey , M. L. Charles , A. Roule , G. Rodriguez , et al.
Thin Solid Films, 2017, 631, pp.23-28. ⟨10.1016/j.tsf.2017.03.055⟩
Journal articles cea-02202452v1
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Influence of water diffusion in deposited silicon oxides on direct bonding of hydrophilic surfaces

J. Desomberg , Frank Fournel , Hubert Moriceau , A. Roule , E. Barthel , et al.
Microsystem Technologies, 2018, 24 (1), pp.801-808. ⟨10.1007/s00542-017-3527-1⟩
Journal articles hal-01821482v1

Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

J. Guy , G. Molas , P. Blaise , C. Carabasse , M. Bernard , et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩
Conference papers hal-02049407v1

Atomistic mechanisms of copper filament formation and composition in $Al_{2}$$ O_{3}$ -based conductive bridge random access memory

C. Nail , P. Blaise , G. Molas , M. C. Bernard , A. Roule , et al.
Journal of Applied Physics, 2017, 122 (2), pp.024503. ⟨10.1063/1.4990979⟩
Journal articles hal-01959911v1

N-doped GeTe as performance booster for embedded phase-change memories

A. Fantini , V. Sousa , L. Perniola , E. Gourvest , J.C. Bastien , et al.
Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States
Conference papers hal-00625213v1

PCRAM performances improvement with nitrogen doped GeTe material for embedded applications

E. Gourvest , C. Vallee , F. Fillot , Hervé Roussel , L. Perniola , et al.
2010 MRS Spring Meeting, 2010, San Francisco (USA), United States
Conference papers hal-00625266v1

The impact of oxide properties on resistive RAM electrical characteristics

V. Jousseaume , C. Guedj , J.F. Nodin , A. Persico , H. Feldis , et al.
2010 MRS Spring Meeting, 2010, San Francisco (USA), United States
Conference papers hal-00625271v1

Investigation of new chalcogenide materials to improve the PCM performance

V. Sousa , L. Perniola , G. Navarro , N. Pashkov , M. Suri , et al.
2011 SIMIT, 11th Non-volatile memory technology symposium, Nov 2011, Shangai, China
Conference papers hal-00669545v1

Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties

E. Gourvest , B. Pelissier , Corentin Vallée , A. Roule , S. Lhostis , et al.
Journal of The Electrochemical Society, 2012, pp.159 (4) H373-H377
Journal articles hal-00669401v1

Oxygen scavenging in TiN/Ta2O5 stack by thin PVD-flashed Al layers for RRAM application.

A. Marty , R. Gassilloud , M. C. Bernard , E. Nolot , S. Favier , et al.
ECASIA, 2015, Granada, Spain
Conference papers hal-01877920v1

Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives

G. Piccolboni , M. Parise , G. Molas , A. Levisse , Jean-Michel Portal , et al.
2016 IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495296⟩
Conference papers hal-01451884v1

Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering

E. Gourvest , S. Lhostis , J. Kreisel , M. Armand , S. Maitrejean , et al.
Applied Physics Letters, 2009, pp.031908
Journal articles hal-00461093v1

Spectroscopic ellipsometric sudy of phase-change materials for data storage applications

E. Gourvest , Corentin Vallée , S. Maitrejean , A. Roule , C. Licitra , et al.
56h National Symposium AVS (2009), 2009, San Jose, United States
Conference papers hal-00461097v1

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

C. Nail , G. Molas , P. Blaise , G. Piccolboni , B. Sklenard , et al.
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩
Conference papers hal-01882789v1

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion.

S. Loubriat , D. Muyard , F. Fillot , A. Roule , M. Veillerot , et al.
Microelectronic Engineering, 2011, 88 (5), pp.817-821
Journal articles hal-00610219v1