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Study of chemical elements diffusion before and after resistive switching in Ta2O5-based CBRAM.
A. Marty
,
R. Gassilloud
,
E. Martinez
,
Corentin Vallée
,
M. Veillerot
,
et al.
EMRS Spring, 2015., 2015, Lille, France
Conference papers
hal-01877907v1
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Influence of Nitrogen Doping on Phase-Change Behaviour of GeTe for Embedded PCRAM Applications
E. Gourvest
,
A. Fantini
,
J.C. Bastien
,
A. Bastard
,
S. Loubriat
,
et al.
MAM 2010, 2010, Mechelen, Belgium
Conference papers
hal-00625275v1
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Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs
V. Jousseaume
,
A. Fantini
,
J.F. Nodin
,
C. Guedj
,
A. Persico
,
et al.
Solid-State Electronics, 2011, 58, pp.62-67
Journal articles
hal-00669415v1
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Impact of dielectrics thermodynamics properties on the diffusion of copper and oxygen in CuTe-based CBRAM devices.
A. Marty
,
R. Gassilloud
,
E. Martinez
,
Corentin Vallée
,
M. Veillerot
,
et al.
MRS, 2015, Boston, United States
Conference papers
hal-01877926v1
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Grazing incident X-ray fluorescence combined with X-ray reflectometry metrology protocol of telluride-based films using in-lab and synchrotron instruments
W. Pessoa
,
A. Roule
,
E. Nolot
,
Y. Mazel
,
M. M. Bernard
,
et al.
Journal articles
cea-01917750v1
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Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.
G. Piccolboni
,
A. El Kacimi
,
G. Molas
,
A. Marty
,
R. Gassilloud
,
et al.
EMRS, 2015, 2015, Lille, France
Conference papers
hal-01877911v1
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Phase Change Memories Challenges: A Material and Process Perspective
S. Maitrejean
,
G. Ghezzi
,
E. Gourvest
,
A. Roule
,
F. Fillot
,
et al.
IEEE International Interconnect Technology Conference - IITC, 2012, San Jose, United States
Conference papers
hal-00777990v1
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Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips
L. Masarotto
,
L. Frey
,
M. L. Charles
,
A. Roule
,
G. Rodriguez
,
et al.
Journal articles
cea-02202452v1
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Influence of water diffusion in deposited silicon oxides on direct bonding of hydrophilic surfaces
J. Desomberg
,
Frank Fournel
,
Hubert Moriceau
,
A. Roule
,
E. Barthel
,
et al.
Journal articles
hal-01821482v1
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Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization
J. Guy
,
G. Molas
,
P. Blaise
,
C. Carabasse
,
M. Bernard
,
et al.
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩
Conference papers
hal-02049407v1
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Atomistic mechanisms of copper filament formation and composition in $Al_{2}$$ O_{3}$ -based conductive bridge random access memory
C. Nail
,
P. Blaise
,
G. Molas
,
M. C. Bernard
,
A. Roule
,
et al.
Journal articles
hal-01959911v1
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N-doped GeTe as performance booster for embedded phase-change memories
A. Fantini
,
V. Sousa
,
L. Perniola
,
E. Gourvest
,
J.C. Bastien
,
et al.
Proc. 2010 IEEE International Electron Devices Meeting (IEDM), 2010, San Francisco, United States
Conference papers
hal-00625213v1
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PCRAM performances improvement with nitrogen doped GeTe material for embedded applications
E. Gourvest
,
C. Vallee
,
F. Fillot
,
Hervé Roussel
,
L. Perniola
,
et al.
2010 MRS Spring Meeting, 2010, San Francisco (USA), United States
Conference papers
hal-00625266v1
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The impact of oxide properties on resistive RAM electrical characteristics
V. Jousseaume
,
C. Guedj
,
J.F. Nodin
,
A. Persico
,
H. Feldis
,
et al.
2010 MRS Spring Meeting, 2010, San Francisco (USA), United States
Conference papers
hal-00625271v1
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Investigation of new chalcogenide materials to improve the PCM performance
V. Sousa
,
L. Perniola
,
G. Navarro
,
N. Pashkov
,
M. Suri
,
et al.
2011 SIMIT, 11th Non-volatile memory technology symposium, Nov 2011, Shangai, China
Conference papers
hal-00669545v1
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Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties
E. Gourvest
,
B. Pelissier
,
Corentin Vallée
,
A. Roule
,
S. Lhostis
,
et al.
Journal of The Electrochemical Society, 2012, pp.159 (4) H373-H377
Journal articles
hal-00669401v1
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Oxygen scavenging in TiN/Ta2O5 stack by thin PVD-flashed Al layers for RRAM application.
A. Marty
,
R. Gassilloud
,
M. C. Bernard
,
E. Nolot
,
S. Favier
,
et al.
ECASIA, 2015, Granada, Spain
Conference papers
hal-01877920v1
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Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives
G. Piccolboni
,
M. Parise
,
G. Molas
,
A. Levisse
,
Jean-Michel Portal
,
et al.
Conference papers
hal-01451884v1
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Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering
E. Gourvest
,
S. Lhostis
,
J. Kreisel
,
M. Armand
,
S. Maitrejean
,
et al.
Applied Physics Letters, 2009, pp.031908
Journal articles
hal-00461093v1
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Spectroscopic ellipsometric sudy of phase-change materials for data storage applications
E. Gourvest
,
Corentin Vallée
,
S. Maitrejean
,
A. Roule
,
C. Licitra
,
et al.
56h National Symposium AVS (2009), 2009, San Jose, United States
Conference papers
hal-00461097v1
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Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
C. Nail
,
G. Molas
,
P. Blaise
,
G. Piccolboni
,
B. Sklenard
,
et al.
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩
Conference papers
hal-01882789v1
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GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion.
S. Loubriat
,
D. Muyard
,
F. Fillot
,
A. Roule
,
M. Veillerot
,
et al.
Microelectronic Engineering, 2011, 88 (5), pp.817-821
Journal articles
hal-00610219v1
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