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Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum wellApplied Physics Letters, 2000, 76 (16), pp.2241 - 2243. ⟨10.1063/1.126308⟩
Journal articles
hal-01928830v1
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HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2–6 µm rangeJournal of Electronic Materials, 2003, 32 (7), pp.602-607
Journal articles
cea-01996933v1
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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layersJournal of Crystal Growth, 2005, 275 (1-2), pp.e2313-e2319. ⟨10.1016/j.jcrysgro.2004.11.370⟩
Journal articles
hal-01976052v1
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Twin free growth of II–VI compounds on (111) CdZnTe substrates by molecular beam epitaxyJournal of Crystal Growth, 1989, 95 (1-4), pp.552-556. ⟨10.1016/0022-0248(89)90464-8⟩
Journal articles
istex
hal-04144290v1
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