Communication Dans Un Congrès Année : 2020

A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

V. Knopik
  • Fonction : Auteur

Résumé

A robust and low cost Si RFSOI Power Transistor which can deliver +31dBm output power with 74% of Power Added Efficiency (PAE) and 18dB of Gain has been optimized for 4G & 5G sub-6GHz Power Amplifier (PA). By means of innovative characterizations combining RF aging tests and modeling, it is proved that this great performance can be achieved while maintaining a very high level of reliability of the PA transistor.

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Dates et versions

cea-04778207 , version 1 (12-11-2024)

Identifiants

Citer

X. Garros, F. Cacho, E. Vincent, E. Granger, F. Gaillard, et al.. A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions. 2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.25.5.1-25.5.4, ⟨10.1109/IEDM19573.2019.8993649⟩. ⟨cea-04778207⟩
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