Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue Materials Science Forum Année : 2024

Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications

Résumé

Silicon-carbide-on-insulator (SiCOI) is a promising platform for photonic integrated circuits. However, the development of this new photonic platform is hindered by the lack of high-quality commercial SiC-on-insulator substrates. In this study, we present a demonstration of the transfer of a single crystalline semi-insulating 4H-SiC thin film on a SiO2 insulated substrate at 150 mm wafer scale using the Smart Cut™ technology. We describe the development of SiCOI substrates and their characterization at each key step of the process. In particular, we provide a detailed study of bow compensation related to the implanted SiC donor substrate. The quality of the transferred SiC layer was investigated as a function of the final annealing temperature applied. The optical indices of the bulk SiC were measured using spectroscopic ellipsometry, and an advanced model has been used to take into account the strong birefringence of the silicon carbide film. Finally, simulations were conducted to design a preliminary set of basic and advanced photonic devices.
Fichier principal
Vignette du fichier
Huet et al_ICSCRM23_MatSciFor_revised.pdf (4.57 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

cea-04752745 , version 1 (24-10-2024)

Identifiants

Citer

Stéphanie Huet, Sylvain Guerber, Emmanuel Rolland, Bertrand Szelag, Guillaume Gelineau, et al.. Demonstration of SiC-on-insulator substrate with Smart Cut™ technology for photonic applications. Materials Science Forum, 2024, 1124, pp.67-76. ⟨10.4028/p-Cb7qw4⟩. ⟨cea-04752745⟩
21 Consultations
11 Téléchargements

Altmetric

Partager

More