Alumina gate dielectric integration for fully-vertical GaN 2 MOSFETs
Résumé
In this work, fully-vertical GaN trench-MOSFET based-on an ALD-Al2O3 gate dielectric were fabricated and characterized to evaluate its electrical performances. Transistors show a normally-OFF behaviour with high I$_{ON}$/I$_{OFF}$ (~10$^9$ ) and significantly small gate leakage current (10$^{-11}$ A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench bottom 15 and trench sidewalls were extracted accurately by taking into account different charging conditions. 16 This methodology enabled an estimation of the effective sidewall and bottom mobilities of 10.3 17 cm²/V.s and 14.9 cm²/V.s, respectively.
