Communication Dans Un Congrès Année : 2023

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

Ismael Charlet

Résumé

We report on the development of CMOS compatible SiN/AlN/GaN MIS-HEMT process on 200mm Si substrates for Ka-band power amplification. The combination of soft gate process, gate design with reduced electric field, in-situ SiN gate dielectric, low temperature ohmic contacts, low substrate RF losses and GaN:C back-barrier leads to Ft/FMAX of 81/173GHz for 2x50µm devices with Lg=150nm. At 28 GHz, the device shows performance similar to other GaN/Si technologies at VDD=10V and competitive performance with GaN/SiC at VDD=20V with PAE=41% and Psat= 6.6W/mm.
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Dates et versions

cea-04539880 , version 1 (09-04-2024)

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Erwan Morvan, Yveline Gobil, Fanny Morisot, Jérôme Biscarrat, Matthew Charles, et al.. 6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts. IEDM 2023 - IEEE International Electron Devices Meeting, Dec 2023, San Francisco, United States. ⟨10.1109/IEDM45741.2023.10413676⟩. ⟨cea-04539880⟩
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