%0 Journal Article %T M -plane AlGaN digital alloy for microwire UV-B LEDs %+ Nanophysique et Semiconducteurs (NPSC) %+ Semi-conducteurs à large bande interdite (NEEL - SC2G) %+ Nanophysique et Semiconducteurs (NEEL - NPSC) %+ Modélisation et Exploration des Matériaux (MEM) %+ Nanostructures et Rayons X (NRX) %A Valera, Lucie %A Grenier, Vincent %A Finot, Sylvain %A Bougerol, C. %A Eymery, Joël %A Jacopin, Gwénolé %A Durand, Christophe %< avec comité de lecture %@ 0003-6951 %J Applied Physics Letters %I American Institute of Physics %V 122 %N 14 %P 141101 %8 2023-04-03 %D 2023 %R 10.1063/5.0141568 %Z Physics [physics]/Condensed Matter [cond-mat] %Z Engineering Sciences [physics]/MaterialsJournal articles %X The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five periods of two monolayer-thick layers of GaN and AlGaN (approximately 50% Al-content) is integrated into the middle of an n-p GaN/AlGaN junction to design core-shell wire- μLED. The optical emission of the active zone investigated by 5 K cathodoluminescence is consistent with the AlGaN bulk alloy behavior. Several contributions from 295 to 310 nm are attributed to the lesser thickness and/or composition fluctuations of AlGaN DA. Single-wire μLED is fabricated using a lithography process, and I–V measurements confirm a diode rectifying behavior. Room temperature UV electroluminescence originating from m-plane AlGaN DA is accomplished at 310 nm. %G English %L cea-04058472 %U https://cea.hal.science/cea-04058472 %~ CEA %~ UGA %~ CNRS %~ INPG %~ NEEL %~ NEEL-SC2G %~ NEEL-NPSC %~ IRIG %~ CEA-GRE %~ UGA-EPE %~ ANR %~ PHELIQS %~ TEST3-HALCNRS