UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Applied Physics Letters Year : 2022

UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

Abstract

Core-shell GaN/AlGaN multiple quantum wells (MQWs) embedded in a p–n junction are integrated on the upper part of GaN microwires grown by silane-assisted metal organic vapor phase epitaxy. Dispersed wires are then contacted by electron beam induced deposition for fabrication of single wire UV-LED devices. Rectifying diode-like behavior is first demonstrated for both GaN and GaN/AlGaN p-n junctions without a MQW active region. A weak leakage current in the GaN/AlGaN core-shell heterostructure is attributed to an additional conduction path along wire sidewalls. Electroluminescence at 340 nm in UV-A is demonstrated using a GaN (2.6 nm)/Al$_{0.3}$ Ga$_{0.7}$N (3 nm) heterostructure embedded in a GaN/Al$_{0.3}$ Ga$_{0.7}$N p–n junction. This value is even decreased to 310 nm by reducing the well thickness to 0.9 nm and increasing the Al-content of barriers (up to 60%) integrated in the GaN/Al$_{0.3}$ Ga$_{0.7}$N p–n junction. This work demonstrates UV-B emission based on single wire core-shell UV-LEDs.
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Dates and versions

cea-03795143 , version 1 (05-10-2022)

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Cite

Vincent Grenier, Sylvain Finot, Lucie Valera, Joël Eymery, Gwénolé Jacopin, et al.. UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures. Applied Physics Letters, 2022, 121 (13), pp.131102. ⟨10.1063/5.0101591⟩. ⟨cea-03795143⟩
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