Photoelectron spectroscopy is a characterization technique which plays a key role in device technology, a field requiring, very often, a reliable and reproducible analysis of buried, critical interfaces. The recent advent of laboratory hard X-ray spectrometers opens new perspectives toward routine studies of technologically-relevant samples for the qualification of processes and materials. In this review, the status of hard X-ray photoelecton spectroscopy (HAXPES) implemented with Chromium K$\alpha$ excitation (5.414 keV), and applied to technological research in nanoelectronics, is presented. After some account on the role of synchrotron HAXPES and the specific effects to care about at the practical level, different aspects are developped, first for illustrating the benefits of the technique through specific applications cases in the field of resistive memories and power transistors. Then, we provide a status on quantification in HAXPES, both from core-level intensities and inelastic background analysis. Finally, we present preliminary results in a novel analytical field, operando HAXPES, where a prototypical device is operated in situ during the laboratory HAXPES experiment, opening the possibility to unravel the mechanisms occuring at buried interfaces and governing device operation.