Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2006

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

No file

Dates and versions

cea-03283689 , version 1 (12-07-2021)

Identifiers

Cite

Véronique Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, Jacques Baggio, et al.. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3242-3252. ⟨10.1109/TNS.2006.885111⟩. ⟨cea-03283689⟩
18 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More