%0 Journal Article %T Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation %+ Laboratoire de Physique et d'Etude des Matériaux (UMR 8213) (LPEM) %+ Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES) %+ Laboratoire de photonique et de nanostructures (LPN) %+ Laboratoire Nano-Magnétisme et Oxydes (LNO) %A Hurand, S. %A Jouan, A. %A Feuillet-Palma, C. %A Singh, G. %A Lesne, E. %A Reyren, N. %A Barthélémy, A. %A Bibes, M. %A Villegas, J. %A Ulysse, C. %A Pannetier-Lecoeur, M. %A Malnou, M. %A Lesueur, J. %A Bergeal, N. %< avec comité de lecture %@ 0003-6951 %J Applied Physics Letters %I American Institute of Physics %V 108 %N 5 %P 052602 %8 2016-02 %D 2016 %R 10.1063/1.4941672 %Z Physics [physics]/Condensed Matter [cond-mat]Journal articles %X We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG. %G English %L cea-03106328 %U https://cea.hal.science/cea-03106328 %~ CEA %~ ESPCI %~ CNRS %~ PARISTECH %~ LPEM %~ IRAMIS-SPEC %~ CEA-UPSAY %~ PSL %~ UNIV-PARIS-SACLAY %~ CEA-UPSAY-SACLAY %~ SORBONNE-UNIVERSITE %~ SU-INF-2018 %~ SU-SCIENCES %~ ESPCI-PSL %~ CNRS-UPSACLAY %~ GS-ENGINEERING %~ IRAMIS %~ GS-PHYSIQUE %~ INSTITUT-SCIENCES-LUMIERE %~ ALLIANCE-SU %~ UMPHY