@article{kammeugne:cea-02972351, TITLE = {{Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method}}, AUTHOR = {Kammeugne, R. Kom and Leroux, C. and Cluzel, J. and Vauche, L. and Royer, C. Le and Gwoziecki, R. and Biscarrat, J. and Gaillard, F. and Charles, M. and Bano, E. and Ghibaudo, G.}, URL = {https://cea.hal.science/cea-02972351}, JOURNAL = {{IEEE Transactions on Electron Devices}}, PUBLISHER = {{Institute of Electrical and Electronics Engineers}}, PAGES = {1-5}, YEAR = {2020}, DOI = {10.1109/TED.2020.3015466}, HAL_ID = {cea-02972351}, HAL_VERSION = {v1}, }