@article{ahleung:cea-02202455, TITLE = {{Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation}}, AUTHOR = {Ah-Leung, Vincent and Pollet, Olivier and Posseme, Nicolas and Barros, Maxime Garcia and Rochat, N{\'e}vine and Guedj, Cyril and Audoit, Guillaume and Barnola, Sebastien}, URL = {https://cea.hal.science/cea-02202455}, JOURNAL = {{Journal of Vacuum Science \& Technology A}}, PUBLISHER = {{American Vacuum Society}}, VOLUME = {35}, NUMBER = {2}, PAGES = {021408}, YEAR = {2017}, DOI = {10.1116/1.4977077}, HAL_ID = {cea-02202455}, HAL_VERSION = {v1}, }