@article{boumchedda:cea-02193602, TITLE = {{High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques}}, AUTHOR = {Boumchedda, Reda and Noel, Jean-Philippe and Giraud, Bastien and Akyel, Kaya Can and Brocard, M{\'e}lanie and Turgis, David and Beign{\'e}, Edith}, URL = {https://cea.hal.science/cea-02193602}, JOURNAL = {{IEEE Transactions on Very Large Scale Integration (VLSI) Systems}}, PUBLISHER = {{IEEE}}, VOLUME = {25}, NUMBER = {8}, PAGES = {2296-2306}, YEAR = {2017}, MONTH = Aug, DOI = {10.1109/TVLSI.2017.2688862}, PDF = {https://cea.hal.science/cea-02193602/file/Red.pdf}, HAL_ID = {cea-02193602}, HAL_VERSION = {v1}, }