%0 Journal Article %T Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays %+ Università degli Studi di Ferrara = University of Ferrara (UniFE) %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %+ Commissariat à l'énergie atomique et aux énergies alternatives (CEA) %A Grossi, Alessandro %A Zambelli, Cristian %A Olivo, Piero %A Nowak, Etienne %A Molas, Gabriel %A Nodin, Jean Francois %A Perniola, Luca %< avec comité de lecture %@ 0741-3106 %J IEEE Electron Device Letters %I Institute of Electrical and Electronics Engineers %V 39 %P 27-30 %8 2018-01 %D 2018 %R 10.1109/LED.2017.2774604 %K OxRRAM %K HfO$_2$ %K variability %K QPC model %Z Engineering Sciences [physics]Journal articles %X In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal–insulator–metal (MIM) stacks featuring different materials and thicknesses. Cellto-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances. %G English %L cea-02187976 %U https://cea.hal.science/cea-02187976 %~ CEA %~ DRT %~ LETI %~ CEA-GRE