%0 Conference Paper %F Oral %T Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %A Biscarrat, J. %A Gwoziecki, R. %A Baines, Y. %A Buckley, J. %A Gillot, C. %A Vandendaele, W. %A Garnier, G. %A Charles, M. %A Plissonnier, M. %< avec comité de lecture %B 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) %C Chicago, United States %I IEEE %P 200-203 %8 2018-05-13 %D 2018 %R 10.1109/ISPSD.2018.8393637 %K III-V semiconductor materials %K Aluminum gallium nitride %K Schottky diodes %K HEMTs %K Heterostructures %Z Engineering Sciences [physics]Conference papers %X We present significant performance enhancementsof AlGaN/GaN power Schottky diodes on 200 mm siliconsubstrates achieved by optimizing the anode fabrication and theepitaxial layers. 600V rated AlGaN/GaN power diodes using aMIS (Metal Insulator Semiconductor)-gated Schottky anode wereprocessed using a CMOS compatible process flow transferable tomass production environments. Turn-on voltages V$_T$ around 0.6V at 25°C, forward voltages V$_F$ lower than 1.6 V at 100 mA/mmand 25°C, reverse leakage currents IREV lower than 1 $\mu$A/mm at600 V and 150°C and excellent dynamic performances wereachieved and outperform state of the art 600V rated AlGaN/GaNSchottky diodes. %G English %L cea-02187888 %U https://cea.hal.science/cea-02187888 %~ CEA %~ DRT %~ LETI %~ CEA-GRE