@inproceedings{biscarrat:cea-02187888, TITLE = {{Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers}}, AUTHOR = {Biscarrat, J. and Gwoziecki, R. and Baines, Y. and Buckley, J. and Gillot, C. and Vandendaele, W. and Garnier, G. and Charles, M. and Plissonnier, M.}, URL = {https://cea.hal.science/cea-02187888}, BOOKTITLE = {{2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)}}, ADDRESS = {Chicago, United States}, PUBLISHER = {{IEEE}}, PAGES = {200-203}, YEAR = {2018}, MONTH = May, DOI = {10.1109/ISPSD.2018.8393637}, KEYWORDS = {III-V semiconductor materials ; Aluminum gallium nitride ; Schottky diodes ; HEMTs ; Heterostructures}, HAL_ID = {cea-02187888}, HAL_VERSION = {v1}, }