@article{hartmann:cea-02186240, TITLE = {{Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si}}, AUTHOR = {Hartmann, J. M. and Aubin, J.}, URL = {https://cea.hal.science/cea-02186240}, JOURNAL = {{Journal of Crystal Growth}}, PUBLISHER = {{Elsevier}}, VOLUME = {488}, PAGES = {43-50}, YEAR = {2018}, DOI = {10.1016/j.jcrysgro.2018.02.036}, KEYWORDS = {Defects ; Stresses ; Surface structure ; Chemical vapor deposition processes ; Germanium silicon alloys}, HAL_ID = {cea-02186240}, HAL_VERSION = {v1}, }