%0 Conference Paper %F Oral %T Precise control of template affinity achieved by UV-assisted graphoepitaxy approach on silicon nanowires applications %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %+ ARKEMA FRANCE, Rue Estienne Orves, Colombes %A Pimenta-Barros, Patricia %A Claveau, Guillaume %A Argoud, Maxime %A Chalupa, Zdenek %A Allouti, Nacima %A Comboroure, Corinne %A Chamiot-Maitral, Gaëlle %A Posseme, Nicolas %A Pain, Laurent %A Tiron, Raluca %A Navarro, Christophe %A Nicolet, Célia %A Cayrefourcq, Ian %< avec comité de lecture %B Novel Patterning Technologies 2018 %C San Jose, Canada %I SPIE %P 11 %8 2018-02-25 %D 2018 %R 10.1117/12.2297407 %K Directed Self-Assembly (DSA) %K Graphoepitaxy %K Surface affinity %K UV modification %K Nanowires %K Etching %K Block-copolymers %Z Engineering Sciences [physics]Conference papers %X Directed Self Assembly (DSA) of block-copolymers (BCPs) is considered as a cost-effective solution to extend the performances of conventional lithography. In this work, we propose a smart surface modification technique to precisely control the surface affinity of guiding template used in the DSA graphoepitaxy process flows. The presented method consists in the UV irradiation of copolymers brushes in order to locally tune their surface affinity. By this way, we are able to differentiate the surface affinities of guide sidewalls (PMMA-attractive) and guide bottom (non-preferential affinity). A complete DSA-module is demonstrated and implemented on a 300mm integration flow dedicated to the creation of silicon nanowires-like transistor. %G English %L cea-02185301 %U https://cea.hal.science/cea-02185301 %~ CEA %~ DRT %~ LETI %~ CEA-GRE