%0 Conference Paper %F Oral %T ALD Alumina Passivated Silicon Nanotrees electrodes for Ultrastable Microsupercapacitors %+ Silicon Nanoelectronics Photonics and Structures (SiNaps) %+ Synthèse, Structure et Propriétés de Matériaux Fonctionnels (STEP) %+ Laboratoire d'Electronique Moléculaire Organique et Hybride (LEMOH) %+ Modélisation et Exploration des Matériaux (MEM) %+ Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) %A Gentile, P. %A Valero, Anthony %A Gaboriau, Dorian %A Boniface, Maxime %A Aldakov, Dmitry %A Sadki, Saïd %< avec comité de lecture %B 2017 E-MRS Fall Meeting %C Varsovie, Poland %8 2017-09-18 %D 2017 %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] %Z Engineering Sciences [physics]/Electric power %Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics %Z Engineering Sciences [physics]/MaterialsConference papers %X The current trend towards miniaturized and autonomous electronic devices requires innovative energy storage solutions. For instance, autonomous micro-sensor networks or implantable medical devices would need a robust power source with high cyclability and a large power density, which might be out of the scope of conventional battery technologies. For such applications, microsupercapacitors ($\mu$SCs) are promising alternatives, and their integration "on-chip" could allow significant innovations. However, finding a suitable "on-chip" $\mu$SCs technology implies addressing key challenges, such as temperature resistance, silicon industry compatibility and good electrochemical performances on a small footprint. Nanostructures such as SiNWs and SiNTrs demonstrated excellent cyclability with more than 1 million cycles of galvanostatic charge/discharge under a 4 V wide electrochemical windows in EMI-TFSI ionic liquid, with large power densities and good capacitance values. Moreover, the use of silicon for electrode material allows extremely interesting developments towards ?on-chip? integration and potential scale-up production using standard silicon industry processes for small micro-sized energy storage devices. Furthermore, we have also investigated the impact of the addition of a high-k dielectric layer, such as Al$_2$O$_3$ as protective films on silicon nanotrees. The electrochemical performances was enhanced, allowing symmetric 2 electrodes device to reach an unprecedented cell voltage of 5.5 V, improving energy and maximum power densities compared to unmodified nanostructured silicon. The cyclability was also largely enhanced, with only 3% capacitance fade after 1 million galvanostatic charge/discharge cycles at 4 V, and no degradation even after several 100000 cycles over 5 V.-Abstract Type : Invited %G English %2 https://cea.hal.science/cea-01993979/document %2 https://cea.hal.science/cea-01993979/file/E-mrs-sa%C3%AFd.pdf %L cea-01993979 %U https://cea.hal.science/cea-01993979 %~ CEA %~ UGA %~ CNRS %~ INAC-SP2M %~ DSM-INAC %~ INC-CNRS %~ CEA-DRF %~ IRIG %~ CEA-GRE %~ TEST-HALCNRS %~ UGA-COMUE %~ SYMMES %~ TEST2-HALCNRS