Interface water diffusion in silicon direct bonding
Résumé
The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray reflectivity is able to monitor the interface density changes associated with the water front progression. The water intake is also revealed through the defect creation upon annealing, creating a rim-like pattern whose extent also gives the water diffusion law. At room temperature, the kinetics observed by either technique are consistent with the Lucas-Washburn law for diffusion through a gap width smaller than 1 nm, excluding any significant no-slip layer thickness. Published by AIP Publishing.