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Journal Articles Nanotechnology Year : 2016

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Xin Zhang
  • Function : Author
  • PersonId : 757471
  • IdRef : 182683214
Hugo Lourenco-Martins
Sophie Meuret
Mathieu Kociak
Catherine Bougerol
Xavier Biquard
Bruno Gayral
Bruno Daudin

Abstract

The structural and optical properties of axial GaN/InGaN/GaN nanowire heterostructures with high InN molar fractions grown by molecular beam epitaxy have been studied at the nanoscale by a combination of electron microscopy, extended x-ray absorption fine structure and nanocathodoluminescence techniques. InN molar fractions up to 50% have been successfully incorporated without extended defects, as evidence of nanowire potentialities for practical device realisation in such a composition range. Taking advantage of the N-polarity of the self-nucleated GaN NWs grown by molecular beam epitaxy on Si(111), the N-polar InGaN stability temperature diagram has been experimentally determined and found to extend to a higher temperature than its metal-polar counterpart. Furthermore, annealing of GaN-capped InGaN NWs up to 800 degrees C has been found to result in a 20 times increase of photoluminescence intensity, which is assigned to point defect curing.
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Dates and versions

cea-01851934 , version 1 (31-07-2018)

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Xin Zhang, Hugo Lourenco-Martins, Sophie Meuret, Mathieu Kociak, Benedikt Haas, et al.. InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology, 2016, 27 (19), pp.195704. ⟨10.1088/0957-4484/27/19/195704⟩. ⟨cea-01851934⟩
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