Growth mechanism of InGaN nanoumbrellas - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Nanotechnology Year : 2016

Growth mechanism of InGaN nanoumbrellas

Abstract

It is demonstrated that growing InGaN nanowires in metal-rich conditions on top of GaN nanowires results in a widening of the InGaN section. It is shown that the widening is eased by stacking faults. (SFs) formation, revealing facets favorable to In incorporation. It is furthermore put in evidence that partial dislocations terminating SFs efficiently contribute to elastic strain relaxation. Indium accumulation on top of the InGaN section is found to result in an axial growth rate decrease, which has been assigned to increased N-N recombination and subsequent effective nitrogen flux decrease, eventually leading to the formation of InGaN nano-umbrellas/nanoplatelets.
No file

Dates and versions

cea-01851933 , version 1 (31-07-2018)

Identifiers

Cite

Xin Zhang, Benedikt Haas, Jean-Luc Rouviere, Eric Robin, Bruno Daudin. Growth mechanism of InGaN nanoumbrellas. Nanotechnology, 2016, 27 (45), pp.455603. ⟨10.1088/0957-4484/27/45/455603⟩. ⟨cea-01851933⟩
147 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More