Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue ChemPhysChem Année : 2016

Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals

Résumé

tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 angstrom. Their comparably large optical and electrochemical band gap of 2.6-2.7eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04In0.96S1.84I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.)10(-2)Sm(-1), which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs.

Dates et versions

cea-01849841 , version 1 (26-07-2018)

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Citer

Aurelie Lefrancois, Stephanie Pouget, Louis Vaure, Miguel Lopez-Haro, Peter Reiss. Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals. ChemPhysChem, 2016, 17 (5), pp.654-659. ⟨10.1002/cphc.201500800⟩. ⟨cea-01849841⟩
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