@article{saighi:cea-01846866, TITLE = {{Plasticity in memristive devices for spiking neural networks}}, AUTHOR = {Sa{\"i}ghi, S. and Mayr, C.G. and Serrano-Gotarredona, T. and Schmidt, H. and Lecerf, G. and Tomas, J. and Grollier, J. and Boyn, S. and Vincent, A.F. and Querlioz, D. and La Barbera, S. and Alibart, F. and Vuillaume, Dominique and Bichler, O. and Gamrat, C. and Linares-Barranco, B.}, URL = {https://cea.hal.science/cea-01846866}, JOURNAL = {{Frontiers in Neuroscience}}, PUBLISHER = {{Frontiers}}, VOLUME = {9}, PAGES = {51}, YEAR = {2015}, DOI = {10.3389/fnins.2015.00051}, KEYWORDS = {short term memory ; semiconductor ; action potential ; controlled study ; electric potential ; electric resistance ; human ; learning ; learning algorithm ; long term memory ; memristive device ; nanodevice ; nerve cell network ; nerve cell plasticity ; neurotransmitter release ; Review ; spiking neural network ; stochastic model ; synapse ; torque ; waveform ; memristor ; neuromorphic engineering ; plasticity ; hardware neural network}, PDF = {https://cea.hal.science/cea-01846866/file/Sai1.pdf}, HAL_ID = {cea-01846866}, HAL_VERSION = {v1}, }