@inproceedings{dicioccio:cea-01839849, TITLE = {{From epitaxy to converters topologies what issues for 200 mm GaN/Si?}}, AUTHOR = {Di Cioccio, L. and Morvan, E. and Charles, M. and Perichon, P. and Torres, A. and Ayel, F. and Bergogne, D. and Baines, Y. and Fayolle, M. and Escoffier, R. and Vandendaele, W. and Barranger, D. and Garnier, G. and Mendizabal, L. and Thollin, B. and Plissonnier, M.}, URL = {https://cea.hal.science/cea-01839849}, NOTE = {Conference of 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference Date: 7 December 2015 Through 9 December 2015; Conference Code:119534}, BOOKTITLE = {{2015 IEEE International Electron Devices Meeting (IEDM)}}, ADDRESS = {Washington, DC, United States}, PUBLISHER = {{Institute of Electrical and Electronics Engineers Inc.}}, VOLUME = {2016-February}, PAGES = {16.5.1-16.5.4}, YEAR = {2015}, MONTH = Dec, DOI = {10.1109/IEDM.2015.7409712}, KEYWORDS = { Gallium nitride ; Emission control ; Electron devices ; Carbon dioxide ; Emission reduction ; Population statistics ; Efficiency improvement ; Power devices ; Transportation mode ; Power semiconductor devices}, HAL_ID = {cea-01839849}, HAL_VERSION = {v1}, }