%0 Journal Article %T Radiation Hardened MRAM-Based FPGA %+ SPINtronique et TEchnologie des Composants (SPINTEC) %A Goncalvez, O. %A Prenat, Guillaune %A Dieny, Bernard %< avec comité de lecture %@ 0018-9464 %J IEEE Transactions on Magnetics %I Institute of Electrical and Electronics Engineers %V 49 %N 7 %P 4355-4358 %8 2013 %D 2013 %R 10.1109/TMAG.2013.2247744 %K Dynamic random access memory (DRAM) %K field-programmable gate array (FPGA) %K look-up table %K magnetic random access memory (MRAM) %K magnetic tunnel junction %K radiation hardening %K scrubbing %K soft error %Z Physics [physics]Journal articles %X Field-programmable gate arrays (FPGAs) are mainly composed of memory cells which store the configuration data defining the implementedfunctionality of the circuit. Today, advanced memories are facing a number of issues such as increased static power consumptionand radiation sensitivity. These can be solved by the use of a new memory technology: magnetic random access memory (MRAM) [1]. Itcombines the reliability against radiation induced soft errors, the non-volatility of Flash memory, fast writing cycle, and the enduranceof static random access memory (SRAM). MRAMs therefore appear as a good candidate for replacing today’s memories in FPGAs [2].To take advantage of all of its assets, a new FPGA architecture has been designed by taking into account all the specificities of MRAMs.This paper presents a silicon proven innovativeMRAM-based look-up table (LUT) intended for space applications. It has been designedto validate the concept and measure the performance. It combines MRAM and dynamic logic for lower power consumption while increasingdensity and reliability to soft errors. %G English %Z HYMAGINE (246942) %2 https://cea.hal.science/cea-01072806/document %2 https://cea.hal.science/cea-01072806/file/Goncalves2013.pdf %L cea-01072806 %U https://cea.hal.science/cea-01072806 %~ CEA %~ CNRS %~ OPENAIRE %~ INAC-SPINTEC %~ DSM-INAC %~ CEA-DRF %~ IRIG %~ CEA-GRE