%0 Journal Article %T Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts %+ Laboratoire de Chimie des Surfaces et Interfaces (LCSI) %+ Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM) %A Alet, Pierre-Jean %A Palacin, Serge %A Roca I Cabarrocas, Pere %< avec comitĂ© de lecture %@ 0040-6090 %J Thin Solid Films %I Elsevier %V 517 %P 6405-6408 %8 2009-02-25 %D 2009 %R 10.1016/j.tsf.2009.02.106 %Z Chemical Sciences/Material chemistryJournal articles %X Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200ÂșC. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to the nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diuse in the silicon layer. %G English %L cea-01056592 %U https://cea.hal.science/cea-01056592 %~ CEA %~ X %~ CNRS %~ X-PICM %~ X-DEP %~ X-DEP-PHYS %~ LPICM %~ PUBNIMBE