%0 Journal Article %T Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers %+ Laboratoire de Physico-Chimie des Matériaux Luminescents (LPCML) %+ Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252) %A Al Choueiry, Antoine %A Jacquier, Bernard %A Jurdyc, Anne-Marie %A Gourbilleau, Fabrice %A Rizk, Richard %< avec comité de lecture %@ 0021-8979 %J Journal of Applied Physics %I American Institute of Physics %V 106 %P 053107 %8 2009 %D 2009 %R 10.1063/1.3211319 %Z Engineering Sciences [physics]/Optics / PhotonicJournal articles %X The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 μm. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er3+ ions, which emit in the visible and the infrared region. %G English %L cea-00415764 %U https://cea.hal.science/cea-00415764 %~ CEA %~ CNRS %~ UNIV-LYON1 %~ INSA-ROUEN %~ NIMPH-CIMAP %~ COMUE-NORMANDIE %~ IRAMIS-CIMAP %~ UNIROUEN %~ ENSICAEN %~ UNICAEN %~ INSA-GROUPE %~ UDL %~ UNIV-LYON %~ CIMAP %~ IRAMIS