Production of pulsed, mass-selected beams of metal and semiconductor clusters - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Review of Scientific Instruments Year : 2008

Production of pulsed, mass-selected beams of metal and semiconductor clusters

Abstract

We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cun+, n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90° quadrupole deviator is used to separate charged clusters from neutral ones.
No file

Dates and versions

cea-00374093 , version 1 (07-04-2009)

Identifiers

  • HAL Id : cea-00374093 , version 1

Cite

Omar Kamalou, Jimmy Rangama, Jean-Marc Ramillon, Patrick Guinement, Bernd A. Huber. Production of pulsed, mass-selected beams of metal and semiconductor clusters. Review of Scientific Instruments, 2008, 79, pp.063301. ⟨cea-00374093⟩
54 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More