@article{audren:cea-00372897, TITLE = {{Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour}}, AUTHOR = {Audren, Aur{\'e}gane and Benyagoub, Abdenacer and Thome, L. and Garrido, F.}, URL = {https://cea.hal.science/cea-00372897}, JOURNAL = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}}, PUBLISHER = {{Elsevier}}, VOLUME = {266}, PAGES = {2810-2813}, YEAR = {2008}, KEYWORDS = {Silicon carbide ; Ion radiation effects ; Radiation damage (amorphization) ; Recrystallization ; Diffusion of impurities}, HAL_ID = {cea-00372897}, HAL_VERSION = {v1}, }