%0 Journal Article %T Two colour experiments in Eu3+ implanted GaN %+ Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252) %+ Instituto Tecnológico e Nuclear (ITN) %A Bodiou, Loic %A Braud, Alain %A Doualan, Jean-Louis %A Moncorgé, Richard %A Lorenz, K. %A Alves, E. %< avec comité de lecture %@ 0925-8388 %J Journal of Alloys and Compounds %I Elsevier %V 451 %P 140-142 %8 2008 %D 2008 %K GaN %K Europium %K Photoluminescence %K Quenching %K Auger effect %Z Physics [physics]/Physics [physics]/Optics [physics.optics]Journal articles %X Two colour experiments can be used to study the excitation mechanisms of rare-earth ions in rare-earth doped wide-bandgap semiconductors as well as the quenching of their photoluminescence (PL). The combined excitation of Eu3+ implanted GaN samples with a pulsed laser and a CW laser, corresponding, respectively, to a below bandgap excitation and to an above bandgap excitation, is investigated. A strong quenching of the rare-earth (RE) luminescence is observed with both lasers compared to the excitation with only one laser. The dependence of the Eu3+ 5D0 lifetime quenching with the emission wavelength and excitation density of the CW laser is presented. The results are explained within the frame of a model describing the occurrence of an Auger effect between excited Eu ions and free carriers created by the CW laser. %G English %L cea-00344143 %U https://cea.hal.science/cea-00344143 %~ CEA %~ CNRS %~ INSA-ROUEN %~ COMUE-NORMANDIE %~ IRAMIS-CIMAP %~ UNIROUEN %~ ENSICAEN %~ UNICAEN %~ INSA-GROUPE %~ CIMAP %~ OML-CIMAP %~ IRAMIS