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Formation Mechanisms of ZnO Nanowires on Polycrystalline Au Seed Layers for Piezoelectric Devices.

C. Lausecker, , B. Salem , X. Baillin, , H. Roussel, , E. Sarigiannidou, , et al.
JNTE, Nov 2019, Grenoble, France
Conference papers hal-02624035v1

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

Pierre Noé , Christophe Vallée , Francoise Hippert , Frédéric Fillot , Jean-Yves Raty
Semiconductor Science and Technology, 2018, 33 (1), pp.013002. ⟨10.1088/1361-6641/aa7c25⟩
Journal articles hal-01954870v1

Silicon nanonet: from nanostructured material to macroscale functional devices for sensing applications

T.T.T. Nguyen , Maxime Legallais , Fanny Morisot , Cazimajou T , B. Salem , et al.
Nanowire Week 2018, Jun 2018, Hamilton, Ontario, Canada
Conference papers hal-01954900v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière , et al.
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Conference papers hal-01905730v1

Area Selective Deposition

C. Vallee , R. Vallat , R. Gassilloud , V. Pesce , N. Posseme , et al.
Belux 3 training school: Chemistry of Atomic Layer Deposition, Mar 2018, Belvaux, Luxembourg
Conference papers hal-01960455v1

Assets and limitations of parallel Angle Resolved XPS for chemical depth profiling on the 14nm and 28nm node technology

L. Fauquier , B. Pelissier , J. Avila , M.-C. Asensio , F. Roze , et al.
ECASIA 2017, Sep 2017, Montpellier, France
Conference papers hal-01960746v1

Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon–germanium nanowires

M. Merhej , T. Honegger , B Bassani , B Baron , D. Peyrade , et al.
Semiconductor Science and Technology, 2018, 33 (1), ⟨10.1088/1361-6641/aa99fd⟩
Journal articles hal-01914356v1


Charly Fontaine , Bernard Pelissier , Mickael Gros-Jean , Thierry Chevolleau
EUROMAT 2017, Sep 2017, Thessalonique, Greece
Conference papers hal-01960712v1

Sn incorporation in vapor-liquid-solid Ge NWs grown by chemical vapor deposition

T. Haffner , F. Bassani , M. Zeghouane , S. David , P. Gentile , et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Conference papers hal-01891352v1

Magnetic superparamagnetic-like microparticles for cancer cells destruction

M. Morcrette , Hélène Joisten , G. Ortiz , S. Lequien , P. Sabon , et al.
2015 IEEE International Magnetics Conference (INTERMAG), May 2015, Beijing, France. pp.1-1
Conference papers hal-02108002v1

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions

Romain Bange , Edwige Bano , Laetitia Rapenne , Sébastien Labau , Bernard Pelissier , et al.
11 th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2016, Halkidiki, Greece
Conference papers hal-02008265v1

Si-SiC nanowires and SiC nanotubes: from an original growth method to potential applications

L Latu-Romain, , Maelig Ollivier , Edwige Bano
15th International Conference on the Formation of Semiconductor Interfaces, ICFSI-15, Nov 2015, Hiroshima, Japan
Conference papers hal-02008595v1

Graphene-HfO2-based resistive RAM memories

Cédric Mannequin , Alexandru Delamoreanu , Laurence Latu-Romain , Vincent Jousseaume , Helen Grampeix , et al.
Microelectronic Engineering, 2016, 161, pp.82 - 86. ⟨10.1016/j.mee.2016.04.009⟩
Journal articles hal-01378826v1

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO 2 thin films grown by the atomic layer deposition technique

A. Chaker , P. Szkutnik , J. Pointet , P. Gonon , Corentin Vallée , et al.
Journal of Applied Physics, 2016, 119 (24), ⟨10.1063/1.4954314⟩
Journal articles hal-01882751v1

Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

Laurent Fauquier , Bernard Pelissier , Denis Jalabert , Francois Pierre , Delphine Doloy , et al.
Surface and Interface Analysis, 2016, 48 (7), pp.436 - 439. ⟨10.1002/sia.5917⟩
Journal articles istex hal-01881936v1

Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line

Edgar Leon Perez , Pierre-Vincent Guenery , O. Abouzaid , Khaled Ayadi , Nicolas Baboux , et al.
EUROSOI-ULIS, 2017, Jan 2017, Athens, Greece
Conference papers hal-01701469v1

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb 2 Te 3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Philippe Kowalczyk , Francoise Hippert , Nicolas Bernier , Cristian Mocuta , Chiara Sabbione , et al.
Small, 2018, 14 (24), pp.1704514. ⟨10.1002/smll.201704514⟩
Journal articles hal-01947876v1

An innovative large scale integration of silicon nanowire-based field effect transistors

M. Legallais , T.T.T. Nguyen , M. Mouis , B. Salem , Eric Robin , et al.
Solid-State Electronics, 2018, 143, pp.97-102. ⟨10.1016/j.sse.2017.11.008⟩
Journal articles hal-01948061v1

Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In 0.53 Ga 0.47 As template

Reynald Alcotte , Mickaël Martin , Jeremy Moeyaert , Patrice Gergaud , Sylvain David , et al.
Thin Solid Films, 2018, 645, pp.119-123. ⟨10.1016/j.tsf.2017.10.006⟩
Journal articles hal-01948078v1

Skilled manpower shortage in microelectronics A challenge for the french education microelectronics network

Olivier Bonnaud , Laurent Fesquet , Ahmad Bsiesy
18th International Conference on Information Technology Based Higher Education and Training, ITHET 2019, Sep 2019, Magdeburg, Germany. pp.8937384, ⟨10.1109/ITHET46829.2019.8937384⟩
Conference papers hal-02472806v1

Fabrication and characterization of « bottom-up » and « top-down » GeSn nanowires

F. Bassani , T. Haffner , E. Martinez , P. Gentile , E. Robin , et al.
EMRS Fall Meeting 2019, 2019, Varsovie, Poland
Conference papers hal-02332971v1

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

Lian Tian , Arnaud Mantoux , Frédérique Mercier , Alexandre Crisci , R. Reboud , et al.
E-MRS Spring, Jun 2018, Strasbourg, France
Conference papers hal-01981226v1

How to build a Si NW-based transistor without nanoscale processing

M. Legallais , T.T.T. Nguyen , M. Mouis , B. Salem
Journées Nationales sur les Technologies Emergentes en Micronanofabrication (JNTE 2017), Renatech, Nov 2017, Orleans, France
Conference papers hal-01929271v1

Quasi insitu XPS characterization applied to PEALD selective deposition of TiO2 - The IMPACT 300mm project and platform: merging academic research and industrial applications in microelectronic

Bernard Pelissier
30th World Nano Conference, May 2019, Zurich, Switzerland
Conference papers hal-02117215v1

Impact of dielectrics thermodynamics properties on the diffusion of copper and oxygen in CuTe-based CBRAM devices.

A. Marty , R. Gassilloud , E. Martinez , Corentin Vallée , M. Veillerot , et al.
MRS, 2015, Boston, United States
Conference papers hal-01877926v1

Potential of nanonets for the 3D integration of biosensors on CMOS (invited)

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , Thuy Thi Thu Nguyen , et al.
Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019, Nov 2019, Lyon, France
Conference papers hal-02400730v1

Procédé de transport et de stockage d'une plaque semiconductrice en enceinte hermetique

Bernard Pelissier
France, Patent n° : B15423 FR. 2016
Patents hal-01905033v1

Nucleation of HfO2 on Si, SiO2 and TiN substrates in PE-ALD processes investigated by in situ ellipsometry and Optical Emission Specroscopy (OES)

M. Bonvalot , S. Belahcen , V. Pesce , A. Chaker , P. Gonon , et al.
AVS 65th International Symposium 2018, Oct 2018, Long Beach, United States
Conference papers hal-01959025v1

Atomic Layer Processing (from ALD to ASD) for next generation of SC devices

C. Vallee , C. Mannequin
2018 Joint Symposium on Energy Materials Science and Technology (Workshop of Pre-Strategic Initiatives), Mar 2018, Tsukuba, Japan
Conference papers hal-01960040v1

Etude par XPS « quasi insitu » de la croissance sélective de couches de TiO2

B. Pelissier , R. Vallat , O. Salicio , R. Gassilloud , C. Vallee
ELSPEC 2018, Jun 2018, Biarritz, France
Conference papers hal-01961087v1