Article Dans Une Revue ACS Applied Electronic Materials Année : 2021

Unconventional seedless multilayers with large perpendicular anisotropy for back-end-of-line compatible spintronic devices

Résumé

An unconventional class of hard and out-of-plane magnetized seedless multilayers (SL-MLs) of the form [Co/insertion layer/Pt]n, grown as a top reference layer in magnetic tunnel junctions (MTJ), was investigated. Among different nonferrous insertion layers (Ta, Cu, Mg, W, Ru, and Al), Ta produces the highest perpendicular magnetic anisotropy. A back-end-of-line (BEOL) compatible hard top reference layer using Ta-inserted SLMLs was achieved, exhibiting more than twice effective perpendicular anisotropy compared to a conventional top reference layer. Using this top reference layer, we developed three types of spintronic memory stacks: (a) top-pinned MTJ stacks that can withstand annealing up to 425 °C, (b) BEOL compatible double-MTJ memory cells with read/write mode control layer enabling a faster readout and low-voltage writing, and (c) 2-bit MTJ stacks combining spin-transfer torque and spin-orbit torque writing. The magnetic properties of these three types of memory stacks are discussed.
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hal-04885765 , version 1 (14-01-2025)

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Jyotirmoy Chatterjee, Paulo Coelho, Antoine Chavent, Ricardo C. Sousa, Stéphane Auffret, et al.. Unconventional seedless multilayers with large perpendicular anisotropy for back-end-of-line compatible spintronic devices. ACS Applied Electronic Materials, 2021, 3 (11), pp.4774-4780. ⟨10.1021/acsaelm.1c00578⟩. ⟨hal-04885765⟩
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