Electrical TCAD simulation of STT-MRAMs
Résumé
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data. The impact of several key parameters is presented, and the obtained values are in good agreement with the ones found in literature. This calibrated TCAD simulation can then be used to study the variability of the switching voltages, the temperature dependence, or the impact of process variations.